Abstract
Recently the InGaAlAs system has attracted considerable attention since its band-gap can be tuned over a relatively large wavelength-range (0.85-1.60μm) by varying the ratio of Ga to Al. Moreover, this material system is a promising alternative to InGaAsP for the fabrication of laser diodes emitting at 1.55μm. Inspite of the growing interest in this material system, very little work has been reported on its refractive index and material dispersion.1,2 In this paper, we develop semi-empirical relations to predict the refractive index and material dispersion of bulk In0.53Ga0.47-yAlyAs in the transparent wavelength region. Our approach is based on the modified single effective oscillator model (MSEOM)3 which has been used successfully in several other III-V compound semiconductors.4
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