Determination of phosphorus death profiles in semiconductor silicon by chemical etching and filament vaporization inductively-coupled plasma atomic emission spectrometry

Abstract

Silicon slices are dissolved by anodizin and removal of the silica film by hydrofluoric acid. The phosphorus in the etching solution is determined by the filament vaporization technique and the depth of silicon is measured by determining the silicon content in the etching solution by conventional inductively-coupled plasma atomic emission spectrometry. A lower limit of 10 18 phosphorus atoms cm −3 can be determined by sectioning intervals of 30–50 nm.