Determination of optical properties of quantum wells with a structure of AlGaN/GaN resonant tunneling diodes (RTDs)

Abstract

Two-dimensional multiple quantum well (MQW) and modified symmetric quantum well (MSQW) carrier confinement play an important role in AlGaN/GaN resonant tunneling diodes (RTDs) efficiency improvement. Therefore, AlGaN-based materials are suitable for development of ultraviolet-light sources. Hence, an attempt is made to investigate the optical properties of AlGaN/GaN. Asymmetric quantum well structure consisting of N-doped AlGaN wells, GaN steps, and undoped AlGaAs barriers is developed. The significant absorption is observed due to the strong coupling effect of the electronic state wave functions. Asymmetric potential well proposed for AlGaN/GaN/AlGaN RTDs. The barriers and the thin layer in the quantum well are theoretically determined. For GaN/AlGaN QW of width L, the frequencies of the symmetric interface modes satisfy the condition. The increase in well width increases the full-width at half maxima (FWHM) from 0 to 100 nm, while increased Al concentration decreases FWHM from 6 to 1 nm.