Abstract
In the present paper, we have investigated the optical property of p-ZnO thin films obtained by bismuth doping. Bi doped p- type ZnO film was grown on ITO coated glass substrate using sol-gel technique. Hot point probe method has been used to analyze the nature of semiconductor thin film and it was observed that film doped with the concentration of 10 mol % Bi shows P-type nature. The XRD spectra of thin films shows that a high quality Bi doped ZnO nanostructures grows along (101) plane. The optical parameters of the thin film like dielectric constant, extinction coefficient and refractive index have been calculated over the range of 300–800 nm wavelength region.
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