Abstract
High-resolution X-ray diffraction (HRXRD) and secondary-ion mass spectroscopy (SIMS) were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that for the coherent samples, N compositions measured by the two methods agree well at lower N compositions ( x<3%), deviate at larger N compositions ( x>3%). The HRXRD measurement by using Vegard's law to extract the lattice constant of GaNAs underestimates N composition at larger N compositions. We found that the underestimation is 8.1% at the x SIMS=3.7%. Partially strain relaxed samples were also studied by using (1 1 5) XRD mapping. The strain relaxation may cause N composition underestimated by XRD.
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