Abstract
We report a novel method for analyzing trace metallic impurities on a Si wafer. The technique using an indicator-rod was developed for collecting metallic impurities, and their concentrations were measured by graphite furnace AAS. Since the operation of the impurity-collecting apparatus was simple and easy, no additional contamination was found on the sample wafer during the collecting operation. The use of a small amount of hydrofluoric acid solution was sufficient to collect metallic impurities completely. For a 6-inch Si wafer, the present method was applicable to the determination of 108109 atoms cm-2 for most metallic impurities.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
