Abstract
AbstractSecondary ion mass spectrometry (SIMS) has been employed to characterize the metallic impurities introduced into ion beam deposited a‐Si: H. For quantitative results, this type of characterization normally requires a specific standard for each element of interest. Ion implantation has been the method of choice for providing these types of standards in Si. The problem with this approach is the time and cost required in obtaining implants for each element to be analyzed. In this study, we describe the application of the local thermal equilibrium (LTE) model of SIMS quantitation to the analysis of metallic impurities in an a‐Si: H matrix. This method circumvents the need for specific standards for each element. Our results indicate that useful quantitative data can be obtained using the LTE method calibrated with one boron implant into c‐Si wafer.
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