Abstract
A new method to determine the electronic density of states in glow discharge amorphous silicon has been applied. The analysis of capacitance-voltage characteristics of metallic gate/SiO2/amorphous silicon (MOS) structures provides the U-shaped gap state distribution with a minimum density of about 1017 cm-3 eV-1 near midgap. The density of tail states at 0.4 eV from both the valence and conduction band is of the order of 1018 cm-3 eV-1. The present results are in disagreement with those previously determined from the field effect technique. Possible explanations for this discrepancy are discussed briefly.
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