Abstract
The bonding configuration and structural evolution of Si-incorporated amorphous carbon (a-C:Si x ) films were studied. The incorporation of Si to amorphous carbon (a-C) has the advantageous effect of promoting sp 3 hybridized bond formation and improving the thermal stability. The composition, bonding configuration, structure and electrical properties of a-C:Si x were investigated as a function of Si concentration. For Si concentration below 10 at.%, incorporated Si substituted for sp 2 C-bonded clusters and the electrical resistivity of a-C:Si x increased significantly. From 10 to 23 at.%, the fraction of sp 3 bonds and the residual stress increased with Si concentration. However, when increasing Si concentration above 23 at.%, it is observed that the contribution of Si-4C bonds increased and residual stress and resistivity of a-C:Si x decreased. From the above results, different structural and bonding characteristics of a-C:Si x were established and this transition of structural evolution is closely related to the incorporated Si content in film.
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