Abstract
We find a maximum achievable thickness of 600 nm for adhering a-C films deposited upon Si(111) and Si(100) substrates. The pulsed laser deposition method is used to produce hydrogen-free carbon films. Strong compressive stress in the films may lead to partial delamination, the stress-relief morphology depends on film thickness and deposition temperature. Deposition at room temperature shows delamination by buckling, cracking and sinusoidal buckling. Although films grown at 500 °C adhere very well to the silicon substrate, delamination is observed when the film thickness exceeds 600 nm. The failures are only partly located at the interface, mostly in the bulk of the silicon substrate.
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