Abstract
By combining temperature dependent RBS measurements with RBS and PIXE angular scan analysis an attempt is made to study whether in weakly damaged ion implanted GaAs layers a difference in the damaging of the Ga and As sublattice occurs. It is found that the half width of the RBS angular scan curves at zero-depth reflects the dose dependence of the concentration and the displacement distance of displaced lattice atoms which were determined by means of temperature dependent RBS measurements. The analysis of the measured PIXE angular scan curves and the comparison with those calculated from RBS angular scans indicates that the As sublattice seems to be slightly more damaged than the Ga sublattice.
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