Abstract
AbstractOn the base of geometrical and statistical considerations a damage simulator was created in order to determine the ion track‐radius and ‐shape of ion‐implantation caused damage in single‐crystalline Si. Damage vs. dose curves calculated by spectroscopic ellipsometry (SE) and Rutherford backscattering/channeling spectrometry (RBS/C) measurements, using different doses of 100 keV Xe implantation, gave information about the damage profile in depth. Both methods are required, because of dose‐dependent discrepancies of SE compared with RBS/C [Fried et al., Thin Solid Films 455/456, 404 (2004)]. Different kinds of damage models were investigated to calculate the ion track‐radius and to describe the damages in depth and the shape of ion track. Comparing directly the simulated and the measured damage vs. dose curves, the damage function and the other simulation parameters were optimized and hence the ion track size and even the shape can be determined. The dose dependent mean size of the unchanged crystalline regions, obtained from the simulation was correlated with the complex dielectric functions, obtained from the SE analysis. The results clearly show the effect of decreasing size of the unchanged crystalline regions. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
