Abstract
The energy distribution of the surface state density N SS( E) on the n-type InP surface was determined from a rigorous computer analysis of the dependence of the band-to-band photoluminescence efficiency ( Y PL) versus excitation light intensity ( Φ). The analysed experimental Y PL– Φ spectrum, taken from the literature, was obtained at room temperature for the chemically polished n-InP(1 0 0) surface. The theoretical values of Y PL were calculated using a numerical simulator, taking account of all possible bulk and surface recombination processes. We reproduced very well the experimental Y PL– Φ dependence, which exhibited a strong increase of Y PL. We also determined the continuous U-shaped N SS( E) distribution from the best fit to the experimental data by applying a novel fully-computer procedure based on genetic algorithm. Furthermore, we found that the surface non-radiative recombination dominates over the bulk recombination channels (in terms of recombination rates), and governs the behaviour of radiative recombination versus Φ.
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