Abstract
A method has been developed for determination of In concentration in strained layers of InGaAs/GaAs heterostructures. Chemical composition and lattice strain were evaluated from the reciprocal space maps obtained for asymmetric reflections. It was observed that beginning of relaxation of the In 0.13Ga 0.87As/GaAs (0 0 1) system with lattice misfit Δ a/ a = 9.3 × 10 −3 and the critical thickness t cMB = 15 nm can be detected for layers of thickness exceeding t ≅ 70 nm ≅ 4.5 t cMB. The principal relaxation mechanism is due to the slipping of 60° misfit dislocations on the tilted (1 1 1) glide planes. The accuracy of indium concentration measurements was estimated to Δ x = ±0.01.
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