Abstract
The mixture of CdS and ZnS semiconductors was identified as a promising material, since its band gap ( 2.4 eV ) absorbs in the visible region and has sufficient energy to take away hydrogen production reaction (Int. J. Hydrogen Energy 11 (1998) 995). ZnS and CdS were prepared by chemical bath processes, mixed to form a paste and then deposited on glass as well as stainless-steel by a screen printing and sintering technique. The flat band potential and therefore the energy of the band edges were calculated using techniques of photocurrent and capacitance–voltage ( C– V). The measurements of C– V were carried out at 20 kHz . The photocurrent properties of the films were characterized using a xenon lamp with a chopper system.
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