Abstract
A steady-state method for determining the excess carrier lifetime using p-i-n diodes is presented. The carrier lifetime is obtained from the r.f. resistance of a forward-biased p-i-n diode measured at microwave frequencies. The carrier lifetime obtained with this method in diffused silicon p-i-n doides is compared with the carrier lifetime obtained from other usual methods of measurement.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
