Abstract
We propose a method for determining electrophysical characteristics (free charge carrier concentration, mobility, and conductivity) of semiconductors from the results of measurements of the microwave spectrum of the impedance of a coaxial probe as a function of applied constant voltage U. The sought parameters have been determined by solving the corresponding inverse problem using the theory of a near-field antenna that was developed earlier. We have developed a computer program that seeks the solution by minimization of the multiparametric residual function in accordance with the Nelder–Mead algorithm. The precision of the method has been analyzed from the results of simulation in which the impedance was calculated preliminarily considering resultant concentration profile n(x, U) of the depleted layer in the vicinity of the metal–semiconductor contact. The possibility of diagnostics with a micrometer lateral resolution has been demonstrated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
