Abstract
A novel technique is presented for interpreting magnetic field-dependent Hall data at magnetic fields below the range at which Shubnikov–de Haas oscillations occur. The technique generates a ‘‘mobility spectrum’’ in which the maximum carrier density or maximum conductivity is determined as a continuous function of mobility. Examples of the use of the technique with synthetic data as well as data from HgCdTe and GaAs/AlGaAs samples are provided. Other uses of the procedure, including measurement of Fermi surface shapes and direct measurement of the distribution of relaxation times, are discussed.
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