Abstract
We have determined the effective work function (Φm,eff) of thin-film sputter-deposited Pr0.7Ca0.3MnO3 (PCMO) on atomic-layer-deposited ZrOx. Pt/PCMO/ZrOx/SiO2/Si and Pt/ZrOx/SiO2/Si metal-oxide-semiconductor (MOS) capacitors were fabricated. The Φm,eff were extracted from capacitance-voltage curves of the MOS capacitors by using flat-band voltage versus effective-oxide-thickness plots. PCMO was crystallized using a high-temperature anneal step and crystallinity was confirmed by x-ray diffraction and transmission electron microscopy. Φm,eff of polycrystalline PCMO and Pt on ZrOx was determined to be 5.43 eV and 5.40 eV, respectively. The significantly higher Φm,eff of PCMO is attributed to the presence of oxygen-rich PCMO(002)/ZrOx interfaces as indicated by our density-functional-theory calculations.
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