Abstract
A new method for determining the doping concentrations in very thin GaAs layers is presented. The method is based on the evaluation and calibration of the changes in ratio of transversal to longitudinal optical phonon intensities measured by micro-Raman spectroscopy at different positions along the bevel prepared through the examined structure. The doping concentrations measurements by micro-Raman spectroscopy on bevelled structures are in good agreement with SIMS depth profiling analysis.
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