Determination of donor and acceptor impurity concentrations in n-InP and n-GaAs

Abstract

The Hall mobility of semiconducting materials is generally computed without accounting for the Hall factor,r H. It is shown that for low magnetic fields this may lead to considerable errors in the calculation of the impurity concentrations,N D andN A, in both n-GaAs and n-InP of reasonable purity. Tables allowing the determination ofN D andN A under low magnetic field conditions are computed at room and liquid nitrogen temperatures. They account forr H and for the inelastic nature of collisions with polar optical phonons without assuming Matthiessen's rule.