Abstract
A new technique is described, which is suitable for the evaluation of the bulk density of localized states in undoped a-Si:H from the time relaxation of the conductivity limited by the space charge prepared by a previous injection of electrons. Time relaxations of the conductivity were measured for different values of bias applied across an n + -i-n + device with thick undoped layer. The density of states determined from the measured data was compared with that extracted from the steady-state space-charge-limited current (SCLC) characteristics.
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