Abstract
In this work, electrical simulations of planar CH3NH3PbI3 solar cells using a SCAPS-1D (a Solar Cell Capacitance Simulator) simulation tool were performed to determine the density of defects based on the performance parameters and J-V characteristics of actual experimental planar CH3NH3PbI3 solar cells. Two types of defects (bulk and interface) were introduced into the simulation model. The densities of those defects were found by fitting the J-V characteristics and performance parameters including , , and FF to the experimental data. The methods and results reported in this paper showed a close relationship between the parameters of defects in planar perovskite solar cells.
 
 
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