Determination of Debye–Waller factor and structure factors for Si by quantitative convergent-beam electron diffraction using off-axis multi-beam orientations

Abstract

Debye-Waller (DW) factors and structure factors have been measured for Si using convergent-beam electron diffraction (CBED) experiments with a transmission electron microscope equipped with a field-emission gun and a post-column energy-filtering device. Si has been used here to evaluate the accuracy of multi-beam near-zone-axis orientations for the simultaneous refinement of DW factors and multiple structure factors. Strong dynamic interactions among different beams are obtained by tilting the crystal to specific four- or six-beam orientations near major zone axes, which provide sufficient sensitivity to determine accurate DW factors and structure factors. The DW factors of Si were measured using four-beam conditions near the [001] zone axis for temperatures ranging from 96 to 300 K. A comparison of the multi-beam near-zone-axis orientations with other CBED methods for DW and structure factor F(g) refinement is presented.