Determination of composition, thickness and growth rate profiles of MOCVD grown Hg-xCdxTe

Abstract

Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) measurements have been performed on epitaxial Hg1-xCdxTe (MCT) layers on sapphire to determine composition, thickness and growth rates at discrete points along, and perpendicular to, the direction of gas flow in the MOCVD reactor cell. Continuous profiles of each property, over an area of 40×90 mm, have then been calculated by polynomial fitting and scaling of these discrete points. These profiles were used to compare MOCVD growth of MCT onto substrates placed on and below the cracking susceptor in the reactor cell.