Abstract
The distributions of As and Ga atoms in an InP/InGaAs/InP hetero-epitaxial layer were investigated on an atomic scale by X-ray CTR (crystal truncation rod) scattering. The relationship between PH 3-purge time (after the InGaAs layer was constructed) and the distributions of As and Ga atoms was studied. In samples which were designed to have a 1 ML-thick InGaAs layer, Ga atoms were not confined to 1 ML (monolayer). The energy levels of the InGaAs well layers were calculated using the measured As and Ga distributions. In order to compare them with the calculated result, a photoluminescence (PL) measurement was conducted and the measured energy levels agreed well with the calculation.
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