Determination of Characteristics and Performance Appraisal of GaN MESFET

Abstract

Several decades in the past have seen the rapid development of modern electronics and recent trends have led to the proliferation of studies that incorporate gallium nitride as a key aspect of fabricating different types of field effect transistors. Moreover, it is fast becoming an essential instrument in other aspects of electronics as well because of its phenomenal inherent properties such as high power, high temperature, and high frequency. A considerable amount of literature has been published on the mathematical formulation of gallium nitride based field effect transistors. However, there has been little quantitative analysis of various electronic properties like intrinsic delay faced by the carrier. This research article examines several properties such as intrinsic delay, gate to source capacitance, gate to drain capacitance, transconductance, cutoff frequency, and channel current for gallium nitride metal-semiconductor field-effect transistor as well as investigates the impact of variation in gate to source voltage on the channel current with proper evaluation of respective characteristics curves.