Determination of capture rates from non-equilibrium quasistaticCU characteristics of MIS capacitors

Abstract

The analysis of non-equilibrium quasistatic CU curves of MIS capacitors reveales that it is possible to distinguish several groups of states differing by their respective effective capture cross sections. A relation between the demarcation energy that separates states in quasi-equilibrium from those in non-equilibrium at the oxide-semiconductor interface, and the equivalent frequency of the quasistatic CU method, is derived. Using the Berglund integral, the surface potential can be calculated even under non-equilibrium conditions. States in the upper half of the gap are found to have up to three orders higher capture cross section for holes compared to that of states in the lower half of the gap.