Abstract
Energy distribution of surface states and majority-carriers capture cross section is determined using the surface-acoustic-wave (SAW) convolver. The semiconductor is placed a small distance above the SAW delay line, with a uniform air gap between the two media. A fast rise time dc pulse is applied across the semiconductor-delay line structure, and the resulting change in the SAW propagation loss is observed. The transient response of the SAW propagation loss represents the emission or trapping of majority carriers from surface states. From this transient response, the capture cross section and the concentration profile of the surface states are determined. The results obtained agree with the already known distribution of fast surface states; it is constant at the middle of the gap and increases towards the conduction band, whereas the capture cross section is constant in the middle of the gap and decreases toward the conduction band. This new SAW technique is simple, sensitive, and requires no contact to the semiconductor surface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
