Abstract
Abstract An anomalous excitation intensity dependence of photoluminescence (PL) in high-quality Al0.3Ga0.7As/GaAs quantum wells was observed at low temperatures. The PL intensity IPL was seen to increase as IPL ∝ IEXm with increasing excitation intensity IEX and the power m varied periodically between 1 and 2, depending on the well width. This phenomenon can be understood in terms of the carrier trapping efficiency under resonant and off-resonant conditions. From the theoretical analysis of the effect, the conduction band off-set can be estimated to be 59–70%, considerably smaller than the value of Dingle et al.
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