Abstract
ZnO thin films find widespread applications in optoelectronic devices, such as LEDs, UV photodetectors, etc. ZnO is an n-type semiconductor and diffusion of As in ZnO leads to p-type conductivity of ZnO. We report here application of combined x-ray reflectivity (XRR) and grazing incidence x-ray fluorescence (GIXRF) technique for the study of diffusion of As in the ZnO thin film structure, deposited on top of GaAs substrate, with accuracies better than 1 nm. Unlike conventional analysis probes, secondary ion mass spectrometry (SIMS) and depth resolved X-ray photoelectron spectroscopy (XPS), the present method allows element specific analysis of the thin film medium in a non-destructive manner.
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