Abstract
Measurement of dissolved chromium concentration in p-type crystalline silicon by means of the change in carrier lifetime due to chromium-boron pair dissociation requires precise knowledge of the recombination parameters of dissolved chromium in silicon. This work, based on quasi-steady-state carrier lifetime measurements, aims to determine the value at 300K of the hole capture cross section of the chromium-boron pairs in p-type silicon, which is the only recombination parameter still unknown at this temperature. The complete knowledge of the recombination parameters allows the determination of dissolved chromium concentrations in p-type silicon as low as 1010cm−3, even when chromium atoms do not dominate carrier recombination.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
