Abstract
Recently we reported the growth of MgB2 films by pyrolysis of decaborane (B10H14) in Mg vapor. In this article, we discuss the intrinsic problem at the MgB2/Al2O3 interface, which was encountered during our optimization of the growth temperature. Mg is a stronger reductant than Al, and takes out oxygen from Al2O3. Increasing the growth temperature, this reaction becomes noticeable and leads to the formation of MgO and Mg1−xAlxB2, which deteriorates the properties of resultant MgB2 films. Our observations present a general issue in the choice of substrate and barrier materials in thin film growth and/or junction fabrication of compounds containing reactive cations such as Mg.
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