Abstract
The characteristics of millimeter-wavelength detectors based on planar Mott diodes with near-surface δ-doping operating without a constant bias are discussed. These detectors have a volt–watt sensitivity of ~1000 V/W with NEP ~ 10 pW/Hz1/2 in the 150–250 GHz range. The obtained estimates reveal the possibility of an additional order-of-magnitude enhancement of the performance characteristics of detectors with smaller areas of the diode barrier contact.
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