Abstract
A well-known method for the determination of vacancy distributions in silicon is based on the decoration of vacancies with in-diffused platinum and subsequent profiling of the Pt-distribution with DLTS analysis. The vacancy profile can then be correlated with the substitutional Pt profile. However, there are significant drawbacks of this method: The in-diffusion of platinum is a high-temperature step, which already can alter the vacancy profile; moreover, DLTS measurements with a suitable depth resolution are time-consuming and difficult. Therefore, it is proposed in this paper to decorate the vacancies with hydrogen by processes finally resulting in the formation of vacancy- and hydrogen-related donor and acceptor states. The determination of such doping profiles and by this the detection of vacancy distributions can be easily enabled by depth-resolved spreading resistance measurements with a very good spatial resolution. Hydrogen atoms for the decoration of vacancies can be incorporated by plasma exposure or ion implantation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
