Abstract
A new magic-mirror (MM) approach, based on the principle of the local distortion of a perfect wave-front (LDPW), is improved by using a homogeneous laser beam. Many Si (epi-) wafers have been evaluated by our approach, and many crystal defects and surface flaws have been observed, including some growth defects, various surface finishing flaws and defects reduced in the process of epi-growth. The phenomenon that the epi-layer amplifies the defects in the Si substrate during the epi-growth process is found. Meanwhile, the redistribution of impurities due to the defects in the substrate is also reported and discussed in this paper.
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