Abstract
A concept for detection of charged particles in a single fly-by, e.g. within an ion optical system for deterministic implantation, is presented. It is based on recording the image charge signal of ions moving through a detector, comprising a set of cylindrical electrodes. This work describes theoretical and practical aspects of image charge detection (ICD) and detector design and its application in the context of real time ion detection. It is shown how false positive detections are excluded reliably, although the signal-to-noise ratio is far too low for time-domain analysis. This is achieved by applying a signal threshold detection scheme in the frequency domain, which - complemented by the development of specialised low-noise preamplifier electronics - will be the key to developing single ion image charge detection for deterministic implantation.
Highlights
Ion implantation is widely used for decades, for example in semiconductor technology, and has recently enabled groundbreaking magnetometry and qubit experiments with e.g. NV-centres in diamond[1,2,3,4,5] or single phosphorous atom devices in silicon[6,7,8,9,10,11]
Whereas in a post-detection scheme, secondary processes initiated by the ion implantation are used for ion detection, a pre-detection scheme is characterized by an ion detection prior implantation
As the sample has to serve as a detector in case of IBIC, it will be difficult to apply induced charge detection to arbitrary sample materials and depending on the material system and ion type, there is always a minimum kinetic energy required for successful detection
Summary
Ion implantation is widely used for decades, for example in semiconductor technology, and has recently enabled groundbreaking magnetometry and qubit experiments with e.g. NV-centres in diamond[1,2,3,4,5] or single phosphorous atom devices in silicon[6,7,8,9,10,11]. For secondary electron detection and IBIC, the signal increases with the kinetic energy of the implanted ions, limiting the sensitivity for low ion energies. Besides limitations to specific materials and ions, every post-detection method necessarily has to guarantee a detection efficiency of 100% for single ion implantation, while at the same time no false positives are allowed. It is shown below, that with a dedicated pre-detection scheme, a detection efficiency smaller than 100% does not impair the feasibility of the method, while under this condition, false positive detection events can be avoided much easier. The idea of the presented detection scheme is based on results in the mass spectrometry of large, slow molecules carrying a high number of net charges
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