Abstract
Single-photon detection in a range of submillimeter waves (λ = 0.17-0.20 mm) is demonstrated by using lateral semiconductor quantum dots fabricated on a high-mobility GaAs/AlGaAs single heterostructure crystal. When a submillimeter photon is absorbed by the quantum dot while it is operated as a single-electron transistor, it switches on (or off) the conductance through the quantum dot. An incident flux of 0.1 photons/s on an effective detector area, (0.1 mm) 2 , is detected with a 1 ms time resolution. The effective noise equivalent power is roughly estimated to reach on the order of 10 -22 W/Hz 1 / 2 , a value superior to the ever reported best values of conventional detectors by a factor more than 10 4 .
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
