Detection of single photons using a field effect transistor with a layer of quantumdots

Abstract

We demonstrate single-photon detection with a GaAs/AlGaAs modulation-dopedfield effect transistor. High sensitivity of the transistor to light is obtained byincorporating in its structure a layer of self-organized InAs quantum dots in closeproximity to the conducting channel but separated by a thin AlGaAs barrier. Weshow that capture of a single photoexcited carrier by a quantum dot results in asizeable change in the source–drain current of the transistor, allowing thedetection of a single photon.