Abstract
We report the use of a sensitive spectrometer system for studying sharp optical absorption lines that are due to transitions between 4f3 crystal-field levels of Nd3+ in epitaxial NdF3 films. Films as thin as 50 Å on GaAs substrates displayed absorption lines with asymmetric line shapes. Samples with an antireflecting LaF3 buffer between the NdF3 layer and the substrate permitted observation of absorption lines in thinner films.
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