Detection of residual defects in silicon doped by neutron transmutation

Abstract

Proton implantation into neutron transmutation doped (NTD) silicon generates three hydrogen-related effective mass-like donors with binding energies between 35 and 44 meV. The donors are formed by the complexing of hydrogen with damage induced by the irradiation. Our results indicate residual defects even in well annealed NTD silicon.