Abstract
We investigated the photogenerated carrier leakage from a Ga0.65In0.35N0.005As0.995/GaAs single quantum well (SQW) by piezoelectric photothermal (PPT) spectroscopy. The PPT measurement can detect the heat generated by a nonradiative recombination of photogenerated carriers. Hence, we could clarify the carrier confinement and leakage processes in the quantum well structure by comparing with the results of the PPT and surface photovoltage (SPV) measurements; the SPV measurement can detect a photoinduced change in the surface potential due to both the drift and accumulation of photogenerated carriers. The results showed that the carrier leakage from the SQW plays an important role in the carrier recombination mechanism, despite the high carrier confinement efficiency of SQW compound structures, which are used in laser diodes.
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