Abstract
We have investigated c- and m-plane GaN substrates by using laser terahertz (THz) emission microscopy (LTEM). Comparing with photoluminescence measurements in a c-plane, we found that the enhancement of THz emission from GaN surface by YL-related defects. Moreover, the non-radiative defects that are undetectable with photoluminescence could be clearly seen in the LTEM image of m-plane. This results indicates that this method is a promising candidate for the evaluation tool of GaN wafers and devices.
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