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Abstract
The analysis of 150 GeV/ c muon data collected during a test of a CMS Preshower prototype is presented. The test took place in 2004 in the H4 beam at CERN. The muon signal extraction is possible after pedestal subtraction and common mode correction. The results of a Geant-4-based simulation, developed for the Preshower prototype test, are also presented. The results of the simulation are found to be in excellent agreement with the data. It is also demonstrated that by combining the results of the data analysis and simulation an absolute calibration of the CMS Preshower detector system can be performed.
Highlights
The CMS Preshower [1] is a fine grain detector, which will be placed in front of the endcaps of the Electromagnetic Calorimeter with a fiducial coverage of 1.653 < η < 2.6
This is achieved with custom high dynamic range front-end electronics (PACE3 [2]) producing analogue voltage samples of the energies deposited in the silicon sensors
The electronic system motherboard (SMB) for each plane was screwed to the aluminium tiles through intermediate aluminum heatsinks
Summary
The CMS Preshower [1] is a fine grain detector, which will be placed in front of the endcaps of the Electromagnetic Calorimeter with a fiducial coverage of 1.653 < η < 2.6. To achieve a high precision measurement of the total energy deposition, Preshower must estimate the energy deposited in the lead with a ~5% accuracy This is achieved with custom high dynamic range front-end electronics (PACE3 [2]) producing analogue voltage samples of the energies deposited in the silicon sensors (proportional to the energy deposited in the lead). This paper presents results of an analysis of 150 GeV/c muon data collected using a prototype Preshower, in order to validate the absolute in-situ calibration procedure. 150 GeV/c muons are on the most probable energy loss plateau, with a most probable energy deposit of 91 keV in the 320 μm thick sensors In silicon this corresponds to about 25000 electrons, or 4 fC. It is demonstrated that by combining the results of the data analysis and the Monte Carlo simulation, a correspondence between ADC counts and mips can be obtained
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