Abstract
The injection of minority carriers into Schottky barrier diodes (SBDs) is controlled by the barrier height φb, the substrate doping density, the forward current density, and the geometry of the SBD, among others. Previously it was shown that the detection of minority-carrier defects by deep-level transient spectroscopy (DLTS) using SBDs without optical injection is possible if SBDs with ultrahigh barrier heights (e.g., φb>0.90 eV for n-Si) are used. In the present paper it is shown that minority-carrier defects may also be detected by DLTS using SBDs with moderately high barrier heights (φb=0.83 eV) on low doped n-Si, provided the SBD is forward biased during the DLTS filling pulse.
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