Abstract
The technique of secondary ion mass spectrometry (SIMS) has been employed to detect Bi + 3 ions and associated oxides Bi 3O + x ( x ≈ 1 to 4) from a Bi foil. Using a 3 keV Ar + ion primary beam of 5 × 10 −7 A/cm 2, mass resolution to nearly 700 with the requisite sensitivity has been achieved. The Bi surface was also monitored by X-ray photoelectron spectroscopy (XPS or ESCA). The presence of a weak O 1s peak at 532.7 eV and a strong SIMS Bi + 3 peak is interpreted to mean that the oxygen is weakly incorporated into the Bi lattice without disrupting metalmetal bonds.
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