Abstract
Effects of noncatastrophic human body model (HBM) electrostatic discharge (ESD) stress at the gate of p-channel power MOSFETs (metal-oxide-semiconductor field-effect transistors) are examined. Low-level stress results in threshold voltage change due to ESD-induced charge injection and trapping in the gate oxide. High-level stress causes an increase in the drain-to-source leakage current due to thermal damage to the drain-body junction. The detection of this noncatastrophic damage may require measurements of leakage currents below 1 nA. Monitoring the subthreshold drain current of power MOSFETs is proposed as a reliable method of detecting the damage induced by high-level HBM ESD stress.
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