Abstract
Correlation between the reverse current densityJRof diamond vertical Schottky barrier diodes (SBD) and the shape of the etch pits is investigated. Etch pits form throughout the whole epitaxial layer area with a density of 6.8 × 104–3.0 × 105 cm−2. Most etch pits are isolated‐type, with flat‐bottom or point‐bottom shape. A typical pit size is 3–5 μm in width and 1–3 μm in depth. Some etch pits aggregate linearly with a size of >10 μm. The SBDs show largeJRwhen these etch pit clusters appear. The etch pit cluster density is <103 cm−2.
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