Abstract
Multiple total internal reflection Fourier transform infrared spectroscopy is used to detect combinational phonon bands of SiO2 at 1645, 1852, and 2000 cm−1 in thin films produced by plasma enhanced chemical vapor deposition. The isotopic shifts of these bands in films deposited from SiH4/18O2 mixtures proved that combinations of SiO2 phonons give rise to the additional absorption peaks. Detection of these combinative phonon bands enables one to use Si multiple total internal reflection crystals for studying Si–O phonon absorptions in SiO2 films on Si. In principle, films as thin as a few angstroms can be detected using the infrared absorption by the combinational bands.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
