Abstract
The surface photovoltage (SPV) measurement is a very suitable method to assess the minority carrier diffusion length in microcrystalline silicon (μc-Si:H). Surface states create space charge region, needed for the SPV technique and diffusion length evaluation, but additionally another space charge region, the bottom one, can appear. We present results of monitoring experimentally the bottom space charge region by SPV technique in thick layers of undoped μc-Si:H grown on different substrates. In layers grown on p+ crystalline silicon substrate and a-Si:H sublayers the surface photovoltage as a function of the absorption coefficient is characterised by a distinct peak at low absorption. Mathematical modelling prescribes the experimental data to a photovoltage signal originating in the bottom interface μc-Si:H/substrate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
